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| SI4410DY N-Channel 30-V (D-S) Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) 0.0135 @ VGS = 10 V 0.020 @ VGS = 4.5 V ID (A) "10 "8 D SO-8 S S S G 1 2 3 4 Top View S N-Channel MOSFET 8 7 6 5 D D D D G Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "20 "10 "8 "50 2.3 2.5 1.6 -55 to 150 Unit V A W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70148. A SPICE Model data sheet is available for this product (FaxBack document #70534). Symbol RthJA Limit 50 Unit _C/W Siliconix S-56580--Rev. H, 09-Feb-98 1 SI4410DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductance b Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID =10 A VGS = 4.5 V, ID = 5 A VDS = 15 V, ID = 10 A IS = 2.3 A, VGS = 0 V 20 0.011 0.015 38 0.7 1.1 0.0135 0.020 1.0 "100 1 25 V nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.3 A, di/dt = 100 A/ms VDD = 25 V, RL = 25 W , ID ^ 1 A VGEN = 10 V, RG = 6 W A, V VDS = 15 V, VGS = 10 V, ID = 10 A 43 9.0 7.0 15 9 70 20 50 30 20 100 80 80 ns 60 nC Notes a. Guaranteed by design, not subject to production testing. Values shown are for product revision A. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. 2 Siliconix S-56580--Rev. H, 09-Feb-98 SI4410DY Typical Characteristics, Product Revision A (25_C Unless Noted) Output Characteristics 50 VGS = 10 V thru 5 V 4V I D - Drain Current (A) 50 Transfer Characteristics 40 I D - Drain Current (A) 40 30 30 20 20 TC = 125_C 25_C -55_C 10 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 10 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.030 0.025 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 0.005 0 0 10 20 30 40 50 ID - Drain Current (A) C - Capacitance (pF) 4200 3500 2800 2100 1400 Coss 700 0 0 6 Crss Capacitance Ciss rDS(on) - On-Resistance ( W ) 12 18 24 30 VDS - Drain-to-Source Voltage (V) 10 VGS - Gate-to-Source Voltage (V) VDS = 15 V ID = 10 A Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 10 A rDS(on) - On-Resistance ( W ) (Normalized) 8 1.5 6 1.0 4 0.5 2 0 0 9 18 27 36 45 0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Siliconix S-56580--Rev. H, 09-Feb-98 3 SI4410DY Typical Characteristics, Product Revision A (25_C Unless Noted) Source-Drain Diode Forward Voltage 50 0.10 On-Resistance vs. Gate-to-Source Voltage 10 TJ = 150_C TJ = 25_C rDS(on) - On-Resistance ( W ) 0.08 I S - Source Current (A) 0.06 0.04 ID = 10 A 0.02 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 0.6 0.4 0.2 VGS(th) Variance (V) Threshold Voltage 80 Single Pulse Power 60 Power (W) ID = 250 mA -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -50 40 20 -25 0 25 50 75 100 125 150 0 0.01 0.10 Time (sec) 1.00 10.00 TJ - Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 4 Siliconix S-56580--Rev. H, 09-Feb-98 |
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